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Luoyang Forged Tungsten-Molybdenum Material Co., Ltd.
Luoyang Forged Tungsten-Molybdenum Material Co., Ltd.
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W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot

Luoyang Forged Tungsten-Molybdenum Material Co., Ltd.
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W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot

Brand Name : FGD

Model Number : fgd t-002

Certification : ISO9001, ISO14000

Place of Origin : China

MOQ : 50KG

Price : USD180-USD2800/KG

Payment Terms : L/C, T/T, Western Union, MoneyGram

Supply Ability : 50 Metric Tons per Month

Delivery Time : 3-5 days

Packaging Details : WOODEN CASE

Shape : Customised

Chemical Composition : W

Relative Density (%) : ≥99

Ra : ≤1.6

Application : thickness and smooth erosion

Product name : Ultra high purity material tungsten alloy w sputtering target

Purity (wt.%) : 99.9%~99.995%

Grain Size : ≤50

Dimension (mm) : ≤D.452

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Ultra high purity tungsten alloy W-Ti sputtering target Plate Planar Billet for Semiconductor Physical Vapor Deposition

Tungsten-titanium (WTi) films are known to act as the effective diffusion barrier between Al and Si in semiconductor and photovoltaic cells industry. WTifilms are typically deposited as thin films by physical vapor deposition (PVD) through sputtering of a WTialloy target. It is desirable to produce a target that will provide film uniformity,minimum particle generation during sputtering, and desired electrical properties. In order to meet the reliability requirements for diffusion barriers of complex integrated circuits, the WTialloy target must have high purity and high density.

Type

W

(wt.%)

Ti

(wt.%)

Purity

(wt.%)

Relative Density

(%)

Grain Size (µm) Dimension (mm)

Ra

(µm)

WTi-10 90 10 99.9-99.995 ≥99 ≤20 ≤Ø452 ≤1.6
WTi-20 80 20 99.9-99.99 ≥99 ≤20 ≤Ø452 ≤1.6
WTi 70-90 10-30 99.9-99.995 ≥99 ≤20 ≤Ø452

≤1.6

W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot


Product Tags:

w-ti metal sputtering targets

      

planar billet metal sputtering targets

      

sputtering targets for semiconductor fabrication

      
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